advanced power n-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss 80v lower on-resistance r ds(on) 7m fast switching characteristic i d 80a rohs compliant description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w w/ t stg t j symbol value units rthj-c thermal resistance junction-case max. 0.5 /w rthj-a thermal resistance junction-ambient max. 62 /w data and specifications subject to change without notice 200606071pre-1/4 AP95T08GP preliminary parameter rating drain-source voltage 80 gate-source voltage 20 continuous drain current, v gs @ 10v 3 80 continuous drain current, v gs @ 10v 70 pulsed drain current 1 320 total power dissipation 300 -55 to 175 operating junction temperature range -55 to 175 linear derating factor 2 thermal data parameter storage temperature range g d s the advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. the to-220 package is universally preferred for all commercial- industrial power applications and suited for low voltage applications such as dc/dc converters. g d s to-220(p)
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =1ma 80 - - v ?? v dss / ? t j breakdown voltage temperature coefficient reference to 25 : , i d =1ma - 0.06 - v/ : r ds(on) static drain-source on-resistance 2 v gs =10v, i d =60a - - 7 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 5 v g fs forward transconductance v ds =10v, i d =60a - 56 - s i dss drain-source leakage current (t j =25 o c) v ds =80v, v gs =0v - - 10 ua drain-source leakage current (t j =150 o c) v ds =64v ,v gs =0v - - 100 ua i gss gate-source leakage v gs = 20v - - 100 na q g total gate charge 2 i d =40a - 93 150 nc q gs gate-source charge v ds =64v - 26 - nc q gd gate-drain ("miller") charge v gs =10v - 42 - nc t d(on) turn-on delay time 2 v ds =40v - 23 - ns t r rise time i d =40a - 96 - ns t d(off) turn-off delay time r g =3.3 ? v gs =10v - 39 - ns t f fall time r d =1 -65- ns c iss input capacitance v gs =0v - 4450 7120 pf c oss output capacitance v ds =25v - 850 - pf c rss reverse transfer capacitance f=1.0mhz - 360 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =60a, v gs =0v - - 1.3 v t rr reverse recovery time 2 i s =40a, v gs =0v - 72 - ns q rr reverse recovery charge di/dt=100a/s - 170 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.package limitation current is 80a, calculated continuous current based on maximum allowable junction temperature is 142a. this product is an electrostatic sensitive, please handle with caution. device or system are not authorized. 2/4 AP95T08GP this product has been qualified for consumer market. applications or uses as criterial component in life support
ap95t08g p fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3/4 0 40 80 120 160 200 240 01234 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10 v 9.0 v 8.0 v 7.0 v v g = 6.0 v 0 20 40 60 80 100 120 01234 v ds , drain-to-source voltage (v) i d , drain current (a) 10v 9.0v 8.0v 7.0v v g = 6.0 v t c =175 o c 4 8 12 16 45678910 v gs gate-to-source voltage (v) r ds(on) (m ) i d =30a t c =25 o c 0.4 0.8 1.2 1.6 2.0 2.4 -50 0 50 100 150 200 t j , junction temperature ( o c) normalized r ds(on) i d =60a v g =10v 0 10 20 30 40 50 60 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =175 o c 0.4 0.6 0.8 1 1.2 1.4 -50 0 50 100 150 200 t j ,junction temperature ( o c) normalized v gs(th) (v)
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4/4 AP95T08GP 0 2 4 6 8 10 12 14 0 20 40 60 80 100 120 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds =40v v ds =50v v ds =64v i d =40a t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 10v q gs q gd q g charge 100 1000 10000 1 5 9 1317212529 v ds ,drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 1 10 100 1000 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) i d (a) t c =25 o c s ingle pulse 100us 1ms 10ms 100ms dc
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